A new type of source generating misfit dislocations

摘要: A new type of misfit dislocation multiplication is deduced from high-voltage electron micrographs thin Ge layers on GaAs substrates. Two dislocations with the same Burgers vectors different glide planes cross and annihilate at intersection point resulting in formation two angular dislocations. The tip one these may reach growth surface by breaking into separate segments. These segments to form additional dislocations, which undergo process.