Transparent conducting oxides: texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor.

摘要: A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, implemented in growth highly conductive transparent CdO thin films. One member the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N-diethyl-N',N'-dimethyl-ethylenediamine)cadmium(II), Cd(hfa)(2)()(N,N-DE-N',N'-DMEDA), represents a particularly significant improvement over previously available Cd precursors, owing to low melting point robust thermal stability. High-quality films were grown by MOCVD on glass single-crystal MgO(100) between 300 412 degrees C. Film parameters substrate surface large effects microstructure electron carrier transport properties. Enhanced mobilities observed for biaxially textured vs are attributed, basis DC charge analysis, reduction neutral impurity scattering and/or more densely packed grain microstructure. Although single-grained exhibit greater than analogues with discrete approximately 100 nm grains similar texture, this effect is Hall measurements as well optical reflectivity differences concentration rather reduced boundary scattering. Unprecedented conductivities high 11,000 S/cm 307 cm(2)/V.s, respectively, obtained epitaxial (X-ray diffraction parameters: fwhm(omega) = 0.30 degrees, fwhm(phi) 0.27 ) situ at relatively temperature (400 C).