Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy
作者： A. M. Kaiser , A. X. Gray , G. Conti , B. Jalan , A. P. Kajdos
DOI: 10.1063/1.4731642
关键词: Layer (electronics) 、 Fermi energy 、 X-ray photoelectron spectroscopy 、 Optoelectronics 、 Density of states 、 Atomic physics 、 Electron spectroscopy 、 Materials science 、 Band offset 、 Doping 、 Fermi level
摘要: We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of 3-nm thickness La-doped with 6% La embedded in film. Results are compared thick, uniformily doped La:SrTiO3 layer. find no indication band offset for the layer, but evidence presence Ti3+ both thick sample and delta-layer, indications density states increase near Fermi energy These results further demonstrate HAXPES is powerful tool non-destructive investigation deeply buried layers.
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