Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface
作者： M. El Kousseifi , K. Hoummada , T. Epicier , D. Mangelinck
DOI: 10.1016/J.ACTAMAT.2015.07.062
关键词: Silicon 、 Transmission electron microscopy 、 Low density 、 Condensed matter physics 、 Crystallography 、 Nickel 、 Materials science 、 Epitaxy 、 High-resolution transmission electron microscopy 、 Direct observation 、 Phase formation
摘要: Abstract The first stages of NiSi phase formation at the expense θ-Ni2Si and a Si substrate are investigated by transmission electron microscopy (TEM). These measurements show presence low density particles θ-Ni2Si/Si(1 0 0) interface allow their complete shape to be determined. This stage corresponds lateral growth epitaxial interface. these is in agreement with predicted models, shapes were fitted an analytical expression derived from model developed Klinger et al.
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