Method for identifying and using process window signature patterns for lithography process control
作者： Shauh-Teh Juang , James Wiley , Jun Ye , Xun Chen , Moshe E. Preil
DOI:
关键词: Real-time computing 、 Chip 、 Control (management) 、 Pattern recognition 、 Signature (logic) 、 Artificial intelligence 、 Set (abstract data type) 、 Wafer 、 Engineering 、 Process (computing) 、 Work in process 、 Process window
摘要: A method for identifying process window signature patterns in a device area of mask is disclosed. The collectively provide unique response to changes set condition parameters the lithography process. enable monitoring associated signs drift, analyzing determine which are limiting and affecting chip yields, corrections that should be fed back into or forwarded an etch process, specific masks do not transfer intended pattern wafers as intended, groups share common characteristics behave similar manner with respect when transferring wafer.
lens.org 参考文章(19)
Khanh B. Nguyen, Technique to separate dose-induced vs. focus-induced CD or linewidth variation ,(1999)
Hidetoshi Morokuma, Chie Shishido, Osamu Komuro, Process conditions change monitoring systems that use electron beams, and related monitoring methods ,(2002)
Matt Hankinson, Walter D. Mieher, Chris A. Mack, Method for process optimization and control by comparison between 2 or more measured scatterometry signals ,(2004)
Matt Hankinson, Joseph J. Bendik, Method and apparatus for the production of process sensitive lithographic features ,(2002)
Alfred Kwok-Kit Wong, Resolution enhancement techniques in optical lithography ,(2001)
Virendra N. Mahajan, Aberration Theory Made Simple ,(1991)
Michael E. Littau, Christopher J. Raymond, Determination of center of focus by cross-section analysis ,(2002)
Timothy A. Brunner, Carlos Fonseca, Nakgeuon Seong, Martin Burkhardt, Impact of resist blur on MEF, OPC, and CD control Optical Microlithography XVII. ,vol. 5377, pp. 141- 149 ,(2004) , 10.1117/12.537472
John A. Allgair, Michelle Ivy, Kevin Lucas, John L. Sturtevant, Richard C. Elliott, Chris A. Mack, Craig W. MacNaughton, John D. Miller, Mike Pochkowski, Moshe E. Preil, John C. Robinson, Frank Santos, Characterization of optical proximity correction features Metrology, inspection, and process control for microlothoggraphy. Conference. ,vol. 4344, pp. 200- 207 ,(2001) , 10.1117/12.436743
Vincent Wiaux, Vicky Philipsen, Rik M. Jonckheere, Geert Vandenberghe, Staf Verhaegen, Thomas Hoffmann, Kurt G. Ronse, William B. Howard, Wilhelm Maurer, Moshe E. Preil, Assessment of OPC effectiveness using two-dimensional metrics SPIE's 27th Annual International Symposium on Microlithography. ,vol. 4691, pp. 395- 406 ,(2002) , 10.1117/12.474588