Method of fabricating a semiconductor device having a colossal magneto-capacitive material being formed close to a channel region of a transistor
作者： Gurtej S. Sandhu
DOI:
关键词: Current (fluid) 、 Magnetocapacitance 、 Electrical engineering 、 Capacitive sensing 、 Materials science 、 Communication channel 、 Magneto 、 Semiconductor device 、 Transistor 、 Electrically conductive 、 Optoelectronics
摘要: Semiconductor devices include a transistor having gate structure located close to channel region that comprises colossal magnetocapacitive material. The is configured affect electrical current flow through the between source and drain. material optionally may be disposed two structures, one or both of which electrically conductive, magnetic, conductive magnetic. Methods fabricating semiconductor forming drain transistor, configuring exhibit magnetocapacitance for generating an field in region. affecting causing generate transistor.
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