Theoretical study of the influence of surface effects on GaN-based chemical sensors
作者： Roozbeh Anvari , Dino Spagnoli , Gilberto A Umana-Membreno , Giacinta Parish , Brett Nener
DOI: 10.1016/J.APSUSC.2018.04.250
关键词: Adsorption 、 ISFET 、 Gallium nitride 、 Electric field 、 Molecular physics 、 Field-effect transistor 、 Oxide 、 Electrolyte 、 Materials science 、 Ion
摘要: … Although β-Ga 2 O 3 is thermodynamically the most stable … X-ray photoemission spectroscopy (XPS) and scanning tunneling … The same conduction band offset is assumed in this model …
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