Signal processing device
作者： Yasuhiko Takemura
DOI:
关键词: Layer (electronics) 、 Inverter 、 Transistor 、 Signal processing 、 Materials science 、 Thermal conduction 、 Terminal (electronics) 、 Optoelectronics 、 Semiconductor 、 Pass transistor logic
摘要: A plurality of writing transistors are connected in series, and a gate pass transistor, an input terminal inverter, or the like is directly indirectly to each connection portion transistors. For example, signal processing device includes first third transistors, one semiconductor layer, wirings that overlap with layer do not other. Potentials can change conductivities at least portions respective wirings. Gates electrically brought into floating state depending on layer. Conduction between sources drains controlled by potentials gates state.
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