Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films
作者： D. J. DiMaria
DOI: 10.1063/1.116678
关键词: Chemical physics 、 Equivalent oxide thickness 、 Anode 、 Oxide thin-film transistor 、 Oxide 、 Substrate (electronics) 、 Fermi level 、 Time-dependent gate oxide breakdown 、 Materials science 、 Silicon dioxide
摘要: The polarity dependence observed for destructive breakdown of ultrathin silicon dioxide films is shown to be directly correlated the oxide degradation caused by hot‐electron‐induced defect production. probability generation also demonstrated depend on Fermi level position at anode/oxide interface. specific anode interface, whether substrate/oxide or gate/oxide, have no direct relationship rate.
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