Growth, Optical, and Transport Properties of Self-Assembled InAs/InP Nanostructures
作者： Oliver Bierwagen , Yuriy I. Mazur , Georgiy G. Tarasov , W. Ted Masselink , Gregory J. Salamo
DOI: 10.1007/978-1-4419-7587-4_8
关键词: Materials science 、 Optoelectronics 、 Photoluminescence 、 Electronic band structure 、 Quantum dot 、 Molecular beam epitaxy 、 Quantum wire 、 Exciton 、 Quantum well 、 Electron mobility
摘要: A comprehensive study, including growth, optical characterization and anisotropic transport in quantum well (QW), wire (QWr), dot (QD) systems, is carried out for the InAs/InP nanostructures grown by gas-source molecular beam epitaxy on InP (001) substrates. Role of substrate misorientation self-organized formation, shape, alignment InAs investigated. The emission absorption properties related to interband transitions are studied means polarization-dependent photoluminescence (PL) transmission spectroscopy. It demonstrated that wavelength extends up 2 μm, technologically important 1.3 μm 1.55 at room temperature. Polarization-dependent PL measurements all QWrs QDs reveal much similarity temperature behavior spite a qualitatively different character one (1D)- zero (0D)-dimensional density-of-states functions. in-plane electrons holes QWrs, QDs, QWs investigated interpreted terms two-dimensional carrier coupled 1D or 0D systems. Peculiar band structure relaxation suggest currently large application potential devices – mainly telecommunication μm.
springer.com
springerlink.com参考文章(130)
Tsuneya Ando, Alan B. Fowler, Frank Stern, Electronic properties of two-dimensional systems Reviews of Modern Physics. ,vol. 54, pp. 437- 672 ,(1982) , 10.1103/REVMODPHYS.54.437
David Fuster, Benito Alén, Luisa González, Yolanda González, Juan Martínez-Pastor, María Ujué González, Jorge M García, Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution Nanotechnology. ,vol. 18, pp. 035604- ,(2007) , 10.1088/0957-4484/18/3/035604
C. Çelebi, J. M. Ulloa, P. M. Koenraad, A. Simon, A. Letoublon, N. Bertru, Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy Applied Physics Letters. ,vol. 89, pp. 023119- ,(2006) , 10.1063/1.2221884
Yasuhiro Tokura, Two-dimensional electron transport with anisotropic scattering potentials Physical Review B. ,vol. 58, pp. 7151- 7161 ,(1998) , 10.1103/PHYSREVB.58.7151
P Wölfle, RN Bhatt, None, Electron localization in anisotropic systems Physical Review B. ,vol. 30, pp. 3542- 3544 ,(1984) , 10.1103/PHYSREVB.30.3542
X. Wallart, B. Pinsard, F. Mollot, High-mobility InGaAs∕InAlAs pseudomorphic heterostructures on InP (001) Journal of Applied Physics. ,vol. 97, pp. 053706- ,(2005) , 10.1063/1.1858871
Ivan Rasnik, Luis GC Rego, Maria V Marquezini, Adriana LC Triques, Maria JSP Brasil, José A Brum, Mônica A Cotta, None, INTERFACE ROUGHNESS LOCALIZATION IN QUANTUM WELLS AND QUANTUM WIRES Physical Review B. ,vol. 58, pp. 9876- 9880 ,(1998) , 10.1103/PHYSREVB.58.9876
A. Létoublon, V. Favre-Nicolin, H. Renevier, M. G. Proietti, C. Monat, M. Gendry, O. Marty, C. Priester, Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction Physical Review Letters. ,vol. 92, pp. 186101- 186101 ,(2004) , 10.1103/PHYSREVLETT.92.186101
Magnus Holm, Mats-Erik Pistol, Craig Pryor, Calculations of the electronic structure of strained InAs quantum dots in InP Journal of Applied Physics. ,vol. 92, pp. 932- 936 ,(2002) , 10.1063/1.1486021
Y. Nakamura, S. Koshiba, H. Sakaki, Large conductance anisotropy in a novel two‐dimensional electron system grown on vicinal (111)B GaAs with multiatomic steps Applied Physics Letters. ,vol. 69, pp. 4093- 4095 ,(1996) , 10.1063/1.117829