Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays
作者： R Hull , J A Floro , M Gherasimova , J F Graham , J L Gray
DOI: 10.1088/1742-6596/209/1/012003
关键词: Electron beam-induced deposition 、 Single crystal 、 Lithography 、 Fabrication 、 Materials science 、 Nanostructure 、 Nanotechnology 、 Focused ion beam 、 Self-assembly 、 Electron microscope
摘要: We employ focused ion beam patterning of single crystal Si(100) surfaces to template the assembly Ge(Si) nanostructure arrays. The evolution and final structures templated arrays are determined by combinations transmission electron, low energy electron microscope, scanning probe microscopies. It is shown how positions individual nanostructures may be controlled order 10 nm. However, achieve spacings between elements that in nm range requires careful matching characteristic lengths scales self mechanisms length external lithographic forcing functions.
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M. Kammler, R. Hull, M. C. Reuter, F. M. Ross, Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning Applied Physics Letters. ,vol. 82, pp. 1093- 1095 ,(2003) , 10.1063/1.1542680
Jennifer L. Gray, Surajit Atha, Robert Hull, Jerrold A. Floro, Hierarchical Self-Assembly of Epitaxial Semiconductor Nanostructures Nano Letters. ,vol. 4, pp. 2447- 2450 ,(2004) , 10.1021/NL048443E
Alexei O. Orlov, Ravi Kummamuru, R. Ramasubramaniam, Craig S. Lent, Gary H. Bernstein, Gregory L. Snider, Clocked quantum-dot cellular automata shift register Surface Science. ,vol. 532, pp. 1193- 1198 ,(2003) , 10.1016/S0039-6028(03)00214-0
M. S. Leite, J. L. Gray, R. Hull, J. A. Floro, R. Magalhães-Paniago, G. Medeiros-Ribeiro, X-ray diffraction mapping of strain fields and chemical composition of SiGe: Si(001) quantum dot molecules Physical Review B. ,vol. 73, pp. 121308- ,(2006) , 10.1103/PHYSREVB.73.121308
Islamshah Amlani, Alexei O Orlov, Geza Toth, Gary H Bernstein, Craig S Lent, Gregory L Snider, Digital logic gate using quantum-Dot cellular automata Science. ,vol. 284, pp. 289- 291 ,(1999) , 10.1126/SCIENCE.284.5412.289
J. L. Gray, R. Hull, J. A. Floro, Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates Journal of Applied Physics. ,vol. 100, pp. 084312- ,(2006) , 10.1063/1.2358003
J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, G. A. Lucadamo, Evolution of coherent islands in Si 1 − x Ge x / Si ( 001 ) Physical Review B. ,vol. 59, pp. 1990- 1998 ,(1999) , 10.1103/PHYSREVB.59.1990
J. Tersoff, F. K. LeGoues, Competing relaxation mechanisms in strained layers. Physical Review Letters. ,vol. 72, pp. 3570- 3573 ,(1994) , 10.1103/PHYSREVLETT.72.3570
A. Portavoce, R. Hull, M. C. Reuter, F. M. Ross, Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation Physical Review B. ,vol. 76, pp. 235301- ,(2007) , 10.1103/PHYSREVB.76.235301
A Portavoce, M Kammler, R Hull, M C Reuter, F M Ross, Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces Nanotechnology. ,vol. 17, pp. 4451- 4455 ,(2006) , 10.1088/0957-4484/17/17/028