Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three‐dimensional pattern doping crystal growth

摘要: We report on a new microfabrication process in UHV, implemented with focused ion beam implanter (FIBI)–molecular epitaxy (MBE) crystal growth system computer controlled writing system. By using this combination technology, GaAs/AlGaAs multilayer pattern doping structures are fabricated by iteration of growing molecular GaAs or AlGaAs layer followed implanting beams, arbitrarily choosing such impurity ions as Be ( p‐type) Si (n‐type). This technology is considered basis for integrating optical electrical devices three dimensionally. An application to structure an AlGaAs/GaAs DH laser also described.