Actively recharged single photon counting avalanche photodiode integrated in an industrial CMOS process

摘要: Abstract An actively recharged single photon counting avalanche photodiode (SPAD) is integrated in a conventional CMOS process. A fast recharge through low impedance path leads to dead time lower than 10 ns. This outstanding feature allows one work with pulse repetition rate up 100 MHz correlated based experiments. Biased 2.5 V above its breakdown voltage, the 30 μm 2 sensitive area has maximum detection probability of about 20% at λ =440 nm and 5% visible part spectrum. At this bias condition, dark count as 60 Hz room temperature, making cooling microsystem unnecessary. The AR-SPAD exhibits no afterpulsing phenomenon revealing maturity process used. timing resolution less 50 ps. For applications where photons can be focused on detector an objective, highly competitive commercially available counter. Furthermore, integration opens way arrays fabrication well co-integration additional functions develop smart optical sensors.