The influence of nanocrystals on the dielectric function of porous silicon
作者： H. Münder , M.G. Berger , H. Lüth , U. Rossow , U. Frotscher
DOI: 10.1016/0169-4332(93)90064-I
关键词: Silicon 、 Phonon 、 Analytical chemistry 、 Porosity 、 Materials science 、 Condensed matter physics 、 Porous silicon 、 Raman spectroscopy 、 Thin film 、 Nanocrystal 、 Density of states
摘要: Abstract Porous silicon films consist of a complicated network crystals with diameters down to the nanometer range. In smallest phonons and electrons are localized. From Raman spectra distributions nanocrystal estimated. The influence microscopic structure on dielectric function is studied by spectroscopic ellipsometry. observed reduction in height imaginary part related porosity layers state oxidation. A broadening slightly changed energies Van Hove singularities joint density states (optical gaps) found for porous Si layers. By performing simulations Si, more information about topology obtained.
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