Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique

摘要: In this work, nickel (Ni) doped indium sulfide (In2S3) films have been prepared by the spray pyrolysis (CSP) technique on glass substrates at 350 °C. The Ni doping level was changed with Ni:In (0, 2 and 4% in solution). structural studies reveal that deposited are polycrystalline nature exhibiting cubic structure. crystallite size decreases from 27.5 to 23 nm root mean square roughness values increase 13 18 nm. transmission coefficient is about 70–55% visible region 85–75% near-infrared region. band gap energy increases content 2.74 2.82 eV for direct transitions. refractive index of In2S3:Ni thin decrease 2.43 2.40 extinction range 0.01–0.20. Besides, AC conductivity contribution interpreted using universal Jonscher’s power law it found thermally activated can be described correlated barrier-hopping models. These help form significant correlation between temperature activation energy. Nyquist plots show electrical response accurately fitted Cole–Cole model represented an equivalent circuit which consists a parallel combination resistance constant phase element. From analysis, evidence grain boundary conduction has observed.