Restoring the lattice of Si-based atom probe reconstructions for enhanced information on dopant positioning.

摘要: The following manuscript presents a novel approach for creating lattice based models of Sb-doped Si directly from atom probe reconstructions the purposes improving information on dopant positioning and informing quantum mechanics materials modeling approaches. Sophisticated crystallographic analysis techniques are used to detect latent crystal structure within with unprecedented accuracy. A distortion correction algorithm is then developed precisely calibrate detected theoretically known diamond cubic lattice. reconstructed atoms positioned their most likely positions. Simulations determine accuracy such an show that improvements short-range order measurements possible noise levels detector efficiencies comparable experimentally collected data.