Introduction and Literature Review

作者: Hoang-Phuong Phan

DOI: 10.1007/978-3-319-55544-7_1

关键词: PiezoelectricityElectrical resistance and conductancePiezoresistive effectGauge factorMicroelectromechanical systemsPower consumptionSemiconductorMaterials scienceEngineering physicsMiniaturization

摘要: The piezoresistance is defined as the change in electrical resistance of a material under external mechanical strain or stress, which was discovered by Smith 1954 (Barlian et al., Proc IEEE, 97(3):513–552, 2009, [1]). Since then, great number research works have been relentlessly carried out to elucidate phenomenon numerous materials. Besides fundamental investigation, applications piezoresistive effect semiconductors can be found Micro Electro Mechanical Systems (MEMS) sensors, thanks its superior properties, including device miniaturization, simple readout circuit, and low power consumption (Eaton Smith, Smart Mater Struct, 6:530–539, 1997, [2]; Kumar Pant, Microsyst Technol, 20(7):1213–1247, 2014, [3]), compared other sensing technologies (e.g. electrostatic, piezoelectric optical).

参考文章(138)
Muthu B.J. Wijesundara, Robert Azevedo, Silicon carbide microsystems for harsh environments TAEBC-2011. ,(2011) , 10.1007/978-1-4419-7121-0
Toan Dinh, Dzung Viet Dao, Hoang-Phuong Phan, Li Wang, Afzaal Qamar, Nam-Trung Nguyen, Philip Tanner, Maksym Rybachuk, Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature Applied Physics Express. ,vol. 8, pp. 061303- ,(2015) , 10.7567/APEX.8.061303
Micro flow sensor using polycrystalline silicon carbide Journal of Sensor Science and Technology. ,vol. 18, pp. 147- 153 ,(2009) , 10.5369/JSST.2009.18.2.147
Dzung Viet Dao, T. Toriyama, J. Wells, S. Sugiyama, Six-degree of freedom micro force-moment sensor for application in geophysics international conference on micro electro mechanical systems. pp. 312- 315 ,(2002) , 10.1109/MEMSYS.2002.984265
Afzaal Qamar, Hoang-Phuong Phan, Dzung Viet Dao, Philip Tanner, Toan Dinh, Li Wang, Sima Dimitrijev, The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain IEEE Electron Device Letters. ,vol. 36, pp. 708- 710 ,(2015) , 10.1109/LED.2015.2435153
Xiaowei Liu, Changzhi Shi, Rongyan Chuai, Polycrystalline Silicon Piezoresistive Nano Thin Film Technology InTech. ,(2010) , 10.5772/6886
CH Park, Byoung-Ho Cheong, Keun-Ho Lee, Kee-Joo Chang, None, STRUCTURAL AND ELECTRONIC-PROPERTIES OF CUBIC, 2H, 4H, AND 6H SIC Physical Review B. ,vol. 49, pp. 4485- 4493 ,(1994) , 10.1103/PHYSREVB.49.4485
Hung-I Kuo, C.A. Zorman, M. Mehregany, Fabrication and testing of single crystalline 3C-SiC devices using a novel SiC-on-insulator substrate international conference on solid state sensors actuators and microsystems. ,vol. 1, pp. 742- 745 ,(2003) , 10.1109/SENSOR.2003.1215580
F. Laermer, A. Urban, Challenges, developments and applications of silicon deep reactive ion etching Microelectronic Engineering. ,vol. 67, pp. 349- 355 ,(2003) , 10.1016/S0167-9317(03)00089-3