Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films
作者： Hidefumi Kimizaki , Satoko Shinkai , Katsutaka Sasaki , Hideto Yanagisawa , Misao Yamane
关键词: Dielectric 、 Tetragonal crystal system 、 Anodizing 、 Monoclinic crystal system 、 Thermal stability 、 Thin film 、 Composite material 、 Doping 、 Materials science 、 Phase (matter) 、 General Engineering 、 General Physics and Astronomy
摘要: We have examined the dielectric properties of Zr–Al anodized thin film capacitors prepared using Al-doped Zr alloy films to improve thermal stability and capacitance density pure-Zr capacitors. The Al content was varied from 0 24 at. %. It revealed that densities increase with increasing 17 %, because tetragonal ZrO2 phase grows monoclinic disappears, although consist a mixture phases. In addition, it confirmed Zr–Al(17 %) is superior film. infer this due formation by doping.
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jsap.jp参考文章(21)
Dominik Fischer, Alfred Kersch, The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles Applied Physics Letters. ,vol. 92, pp. 012908- ,(2008) , 10.1063/1.2828696
Thaddeus B Massalski, Hiroaki Okamoto, PRnbsp Subramanian, Linda Kacprzak, William W Scott, None, Binary alloy phase diagrams ASM International. ,vol. 3, pp. 2874- ,(1986)
R. M. Fleming, D. V. Lang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. van Dover, J. R. Kwo, A. M. Sergent, Defect dominated charge transport in amorphous Ta2O5 thin films Journal of Applied Physics. ,vol. 88, pp. 850- 862 ,(2000) , 10.1063/1.373747
Tomoharu Shibata, Hidefumi Kimizaki, Satoko Shinkai, Katsutaka Sasaki, Hideto Yanagisawa, Misao Yamane, Yoshio Abe, Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films Japanese Journal of Applied Physics. ,vol. 48, pp. 085504- ,(2009) , 10.1143/JJAP.48.085504
Xinyuan Zhao, David Vanderbilt, Phonons and lattice dielectric properties of zirconia. Physical Review B. ,vol. 65, pp. 075105- ,(2002) , 10.1103/PHYSREVB.65.075105
Masahiro Kamijyo, Tomotake Onozuka, Satoko Shinkai, Katsutaka Sasaki, Misao Yamane, Yoshio Abe, Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation Japanese Journal of Applied Physics. ,vol. 42, pp. 4399- 4403 ,(2003) , 10.1143/JJAP.42.4399
Choong-Ki Lee, Eunae Cho, Hyo-Sug Lee, Cheol Seong Hwang, Seungwu Han, First-principles study on doping and phase stability of HfO 2 Physical Review B. ,vol. 78, pp. 012102- ,(2008) , 10.1103/PHYSREVB.78.012102
H. Habazaki, M. Uozumi, H. Konno, K. Shimizu, S. Nagata, K. Asami, K. Matsumoto, K. Takayama, Y. Oda, P. Skeldon, G.E. Thompson, Influences of structure and composition on growth of anodic oxide films on TiZr alloys Electrochimica Acta. ,vol. 48, pp. 3257- 3266 ,(2003) , 10.1016/S0013-4686(03)00383-9
Hideto Yanagisawa, Masahiro Kamijyo, Satoko Shinkai, Katsutaka Sasaki, Yoshio Abe, Misao Yamane, Electrical Properties of HfO2Thin Insulating Film Prepared by Anodic Oxidation Japanese Journal of Applied Physics. ,vol. 41, pp. 5284- 5287 ,(2002) , 10.1143/JJAP.41.5284
G. D. Wilk, R. M. Wallace, J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations Journal of Applied Physics. ,vol. 89, pp. 5243- 5275 ,(2001) , 10.1063/1.1361065