Using the electron spin resonance to detect the functional centers in materials for sensor devices

摘要: The paper reports and comments the results of several electron spin resonance investigations, performed on semiconductor oxides for gas sensing. main aspects, related to comparison between spectroscopic electric data, are concerning (i) role oxide defects in interacting with atmosphere; (ii) origin sensing enhancement, which follows doping by transition metal ions; (iii) effects different particle morphology controlled shape functionality. have been associated, when possible, those deriving from X-ray photoelectron spectroscopy, order investigate electronic configuration centers. Special emphasis has deserved synthesis procedures, cases well electrical response. data drawn studies, time periods, compared suggest a possible common interpretation mechanism, based either or morphological properties.