作者: William Liu
DOI:
关键词: Transistor model 、 Transistor 、 Bipolar junction transistor 、 Spice 、 Heterostructure-emitter bipolar transistor 、 Noise (electronics) 、 Amplifier 、 Materials science 、 Optoelectronics 、 Heterojunction
摘要: Basic Properties and Device Physics of III--V Materials. Two--Terminal Heterojunction Devices. D.C. Current Gain. Nonideal Characteristics. Thermal--Electrical Properties. Collapse Failure Mechanisms Reliability Issues. Small--Signal Epitaxial Layer Design. Geometrical Layout Power Amplifier. Distortion Noise. Switching Characteristics Spice Models. Transistor Fabrication. Measured Performances. Appendices. Glossary Symbols. Index.