Interplay between random and chemically guided effects in Kr+-bombarded Ti/Si bilayers
作者： A Miotello , M Bonelli , R Kelly , F Ferrari
DOI: 10.1016/S0257-8972(98)00364-8
关键词: Auger electron spectroscopy 、 Rutherford backscattering spectrometry 、 Materials science 、 Intermetallic 、 Silicon 、 Auger 、 Phase (matter) 、 Ion beam mixing 、 Analytical chemistry 、 Thin film
摘要: Abstract Compositional changes in Ti/Si bilayers induced by bombardment with 30 keV Kr were studied Auger electron spectroscopy and Rutherford backscattering spectrometry. The observed the Si profiles (and line-shapes) indicated a sequence of chemical environments mixed at greatest depths, phase similar to TiSi 2 intermediate depths smallest depths. In contrast bombardments N + , as reported previous work, there is no tendency for be transported surface. By changing thickness Ti film over substrate while maintaining same implantation conditions, it was established that formation occurs well beyond range (15.5 nm), inferred defect migration 40–70 nm contributes significantly mixing. An explicit indication effects elevated temperatures notably absent: thermal-spike certainly occurred, but these not prominent.
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