作者: Morinobu Endo , Takuya Hayashi , Seong-Hwa Hong , Toshiaki Enoki , Milred S. Dresselhaus
DOI: 10.1063/1.1409581
关键词: Carbon 、 Highly oriented pyrolytic graphite 、 Scanning tunneling spectroscopy 、 Chemical physics 、 Boron 、 Crystallography 、 Raman spectroscopy 、 Graphite 、 Scanning tunneling microscope 、 Materials science 、 Graphene
摘要: Atomically resolved scanning tunneling microscopy (STM) results are shown for substitutionally doped boron atoms in the hexagonal carbon network of highly oriented pyrolytic graphite (HOPG). STM images of boron-doped HOPG reveal not only a clear change in the electronic structure of the surface graphene network, but also one that directly affects the electronic structure of the graphene layer from the HOPG surface which is very exceptional for STM measurements. The boron atom site in the graphene network appears …