作者: Hikaru Nishitani , Hiroyasu Nakata , Yasufumi Fujiwara , Tyuzi Ohyama
关键词: Visible laser light 、 Photoluminescence 、 Annealing (metallurgy) 、 Porous silicon 、 Luminescence 、 Porosity 、 Light induced 、 Materials science 、 Optics 、 Photochemistry 、 General Engineering 、 General Physics and Astronomy
摘要: We have investigated the light-induced degradation of visible photoluminescence (PL) and its recovery in porous silicon. It has been found that exposure sample to UV laser light results drastic quenching PL intensity. Furthermore, intensity photodegraded is effectively recovered by annealing at low temperature up 200°C, rather than HF etching. Based on behavior fatigue through low-temperature annealing, origin luminescence silicon discussed.