Electronic structure of graphene and doping effect on SiO 2

摘要: First-principles calculations show that the electronic structure of graphene on ${\text{SiO}}_{2}$ strongly depends surface polarity and interface geometry. Surface dangling bonds mediate coupling to can induce hole or electron doping via charge transfer even in absence extrinsic impurities substrate. In an geometry where is weakly bonded O-polar surface, $p$ doped, whereas $n$ takes place a Si-polar with active bonds. We suggest domains observed are related different polarities.