Photolithography System Using Modified Illumination

摘要: Since the LSI pattern size has approached exposure wavelength, various methods have been developed to overcome limitations in photolithography. This fact indicates that a shorter wavelength or some novel techniques will be needed order cope with finer patterns. The modified illumination method was proposed improve depth of focus and resolution limit. We applied step-and-repeat system. Experiments using were carried out sub-half-micron patterns produced. process latitudes are evaluated.