作者: T. H. George , P. M. Stier
DOI: 10.1063/1.1733409
关键词: Chemical physics 、 Computational chemistry 、 Langmuir 、 Chemisorption 、 Adsorption 、 Monolayer 、 Sticking coefficient 、 Substrate (electronics) 、 Tungsten 、 Chemistry 、 Layer (electronics) 、 Physical and Theoretical Chemistry 、 General Physics and Astronomy
摘要: Chemisorption of oxygen on highly ordered and relatively disordered tungsten surfaces at substrate temperatures 20° 300°K has been studied in the field‐emission microscope. Evidence is presented for chemisorption a monolayer gas with sticking coefficient unity adsorption second, initially mobile layer oxygen, also when temperature 20°K. These results are independent degree surface order over range considered. The second adsorbed not observed 300°K, use Langmuir postulate that only clean contributes to allows definition constant 0.8 300°K. Variations dipole moment per adatom crystallographic orientation reported.