Chemisorption of Oxygen on Ordered Tungsten Surfaces

作者: T. H. George , P. M. Stier

DOI: 10.1063/1.1733409

关键词: Chemical physicsComputational chemistryLangmuirChemisorptionAdsorptionMonolayerSticking coefficientSubstrate (electronics)TungstenChemistryLayer (electronics)Physical and Theoretical ChemistryGeneral Physics and Astronomy

摘要: Chemisorption of oxygen on highly ordered and relatively disordered tungsten surfaces at substrate temperatures 20° 300°K has been studied in the field‐emission microscope. Evidence is presented for chemisorption a monolayer gas with sticking coefficient unity adsorption second, initially mobile layer oxygen, also when temperature 20°K. These results are independent degree surface order over range considered. The second adsorbed not observed 300°K, use Langmuir postulate that only clean contributes to allows definition constant 0.8 300°K. Variations dipole moment per adatom crystallographic orientation reported.

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