The growth of strained Si 1− x Ge x alloys on 〈001〉 silicon using solid phase epitaxy

摘要: In this paper we report on the growth of pseudomorphically strained Si1−xGex alloys 〈001〉 Si by solid phase epitaxy. One set amorphous was formed high dose ion implantation 74Gc implanted at an energy 200 kcV to a fluence 9.6 ⊠ 1020/m2). Our TEM observations show that regrowth these Si1−xGex(xmax = 0.14) films ≍590°C results in density planar defects and are associated with faceting amorphous/crystalline interface during annealing. These were compared MBE-grown Si0.7Ge0.3 amorphized 170 keV 28Si ions which exhibited identical regrowth. Attendant decrease velocity, result change from {001} morphology multi-faceted surface containing many <50 nm deep pyramidal impressions. The rate quantified, particular temperature, use homoepitaxy for calibration situ experiments. It shown 594°C pure 51 nm/min, whereas decreased, as {111} faceting, 21 nm/min. RBS used characterize Ge concentrations lattice resolution study development faceted