Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co− and N+ beam implantations

摘要: Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25-keV Co− and N+ ions several fluences ranging from 1.0 × 1015 to 1.0 × 1016 ions/cm2. The pristine the ion implanted characterized by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force (AFM) UV–Vis spectrometry. RBS spectra reveal signature only cobalt nitrogen in accordance their confirming absence any contamination arising due implantation. An increase average crystallite size (from 13.7 15.3 nm) was confirmed XRD. On other hand, showed a decrease 20.1 13.7 nm. XRD results further verified SEM micrographs. As seen AFM images, RMS surface roughness samples both beams found bit (29.4 22.2 nm 24.2 23.3 nm samples) increasing fluence. Tauc's plot deduced UV–visible that band gap decreases 3.54 3.27 eV increases 3.38 3.58 eV for ions. experimental suggest modifications structural optical properties can be controlled optimizing implantation conditions. Copyright © 2017 John Wiley & Sons, Ltd.