Magnetoresistance behavior of nanoscale antidot arrays
作者： CC Wang , AO Adeyeye , N Singh , YS Huang , YH Wu
DOI: 10.1103/PHYSREVB.72.174426
关键词: Materials science 、 Lithography 、 Micromagnetics 、 Spin-½ 、 Magnetoresistance 、 Magnetic hysteresis 、 Nanostructure 、 Magnetization 、 Coercivity 、 Condensed matter physics 、 Electronic, Optical and Magnetic Materials
摘要: We investigate the transport properties of nanometer-scale Ni80Fe20 antidot arrays fabricated using deep ultraviolet lithography. Magnetotransport measurements have been shown as a powerful and sensitive technique in mapping magnetization reversal process complex magnetic structures. Compared with continuous film, drastic increase coercivity structures due to local modification spin configurations was observed. found that current density distribution is periodically modulated by presence holes, which gives rise interesting high-field sloping behavior magnetoresistance MR . The effect film thickness for fixed lateral geometry on response also investigated, be strongly dependent thickness. Our experimental results were further verified hysteresis micromagnetic simulations, show good agreement data.
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