Inductively coupled plasma system

作者: Hea-young Yoon , Dong-joon Ma , Chang-wook Moon , Yuri Nikolaevich Tolmachev

DOI:

关键词: InductorPlasmaSusceptorOptoelectronicsPlasma reactionSubstrate (printing)ShutterInductively coupled plasmaWaferChemistryAnalytical chemistry

摘要: An inductively coupled plasma apparatus is provided, wherein the includes a process chamber having wafer susceptor on which substrate installed, top source installed chamber, reactor, in channel through gas flows, reactor supplies reaction products to an inductor, two ends, between and wound around opening positioned within circumferential space inductor shutter operable open close opening. Thus, uniform radial distribution of radicals emanating from can be improved.

参考文章(8)
Qiwei Liang, Jerry C Chen, Edward L Floyd, Victor H Fuentes, Daniel J Hoffman, Simon Yavelberg, Allen I. D'ambra, Dmitry Lubomirsky, Temperature control system for process chamber ,(1999)
Monique Ben-Dor, Brian Mcmillin, Butch Berney, Huong Nguyen, Alex T. Demos, Paul Kevin Shufflebotham, Inductively coupled plasma cvd ,(1997)
Maya Shendon, Arnold Kholodenko, Efrain Quiles, Ke Ling Lee, Temperature control system for semiconductor process chamber ,(1998)
G. R. Tynan, Neutral depletion and transport mechanisms in large-area high density plasma sources Journal of Applied Physics. ,vol. 86, pp. 5356- 5364 ,(1999) , 10.1063/1.371532
Stuardo Robles, Bang C. Nguyen, Kathleen Russell, Visweswaren Sivaramakrishnan, Chemical vapor deposition reactor system and integrated circuit ,(1996)
Steven C. Selbrede, Martin L. Hammond, Brad S. Mattson, Stephen E. Savas, Inductive plasma reactor ,(1994)