A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE

作者: P. Reynaert , M.S.J. Steyaert

DOI: 10.1109/JSSC.2005.857425

关键词: AmplifierDifferential amplifierDirect-coupled amplifierPower-added efficiencyLinear amplifierEngineeringPower bandwidthRF power amplifierElectrical engineeringCascade amplifier

摘要: … the drain voltage is only limited by the oxide breakdown and … at maximum output power, the actual supply voltage of the … The spectral mask at 400 kHz offset is much lower which …

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