High quality silicon-based substrates for microwave and millimeter wave passive circuits
作者： Y. Belaroussi , M. Rack , A.A. Saadi , G. Scheen , M.T. Belaroussi
DOI: 10.1016/J.SSE.2017.06.028
关键词: Insertion loss 、 Electronic circuit 、 Substrate (electronics) 、 Optoelectronics 、 Relative permittivity 、 Microwave 、 Materials science 、 Silicon 、 Porous silicon 、 Band-pass filter 、 Electronic engineering
摘要: Abstract Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from bulk silicon. In this work, new variants porous (PSi) substrates have been introduced. Through an experimental RF performance, proposed PSi compared with different silicon-based substrates, namely, standard (Std), trap-rich (TR) and high resistivity (HR). All mentioned fabricated where identical samples CPW lines integrated on. The shown successful reduction in substrate's effective relative permittivity to values as low 3.7 great increase higher than 7 kΩ cm. As a concept proof, mm-wave bandpass filter (MBPF) centred at 27 GHz has on investigated substrates. Compared conventional MBPF implemented measured S-parameters PSi-based filtering such insertion loss enhancement selectivity, joy having same performance by varying temperature. Therefore, efficiency well highlighted.
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