作者: Jia Liu , Weijia Zhang , Dengyuan Song , Qiang Ma , Lei Zhang
DOI: 10.1016/J.MSSP.2014.06.005
关键词: Sintering 、 Materials science 、 Doping 、 Thin film 、 Ceramic 、 Sputter deposition 、 Composite material 、 Sputtering 、 Metallurgy 、 Powder metallurgy 、 Gallium
摘要: Abstract This research reports the sintering mechanism of Ga doped ZnO (GZO) ceramic targets. The GZO powders with different doping concentrations were synthesized by chemical co-precipitation method and compacted to form green compacts. compacts underwent a normal process under temperatures. Then series targets sintered at 1300 °C used for depositing thin films DC magnetron sputtering method. influences temperature concentration on densification, structural electrical properties investigated. Results showed that effectively promoted qualities When surpassed 1300 °C, relative densities all higher than 97%. lowest resistivity 2.25×10−3 Ω cm was attained 0.5 at% 1300 °C. In addition, performances greatly influenced their