Observation of the Giant Stark Effect in Boron-Nitride Nanotubes

作者: Masa Ishigami , Jay Deep Sau , Shaul Aloni , Marvin L Cohen , A Zettl

DOI: 10.1103/PHYSREVLETT.94.056804

关键词: Nanoscopic scaleOptoelectronicsElectric fieldBoron nitrideNanotubeMaterials scienceScanning tunneling spectroscopyNanotechnologyBand gapScanning tunneling microscopeStark effect

摘要: Bias dependent scanning tunneling microscopy and spectroscopy have been used to characterize the influence of transverse electric fields on electronic properties boron-nitride nanotubes (BNNTs). We find experimental evidence for theoretically predicted giant Stark effect. The observed effect significantly reduces band gap BNNTs thus greatly enhances utility nanoscale electronic, electromechanical, optoelectronic applications.

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