作者: Masa Ishigami , Jay Deep Sau , Shaul Aloni , Marvin L Cohen , A Zettl
DOI: 10.1103/PHYSREVLETT.94.056804
关键词: Nanoscopic scale 、 Optoelectronics 、 Electric field 、 Boron nitride 、 Nanotube 、 Materials science 、 Scanning tunneling spectroscopy 、 Nanotechnology 、 Band gap 、 Scanning tunneling microscope 、 Stark effect
摘要: Bias dependent scanning tunneling microscopy and spectroscopy have been used to characterize the influence of transverse electric fields on electronic properties boron-nitride nanotubes (BNNTs). We find experimental evidence for theoretically predicted giant Stark effect. The observed effect significantly reduces band gap BNNTs thus greatly enhances utility nanoscale electronic, electromechanical, optoelectronic applications.