An X-band GaN combined solid-state power amplifier
作者： Chen Chi , Hao Yue , Feng Hui , Yang Linan , Ma Xiaohua
DOI: 10.1088/1674-4926/30/9/095001
关键词: RF power amplifier 、 Amplifier 、 Direct-coupled amplifier 、 Electrical engineering 、 Engineering 、 Power gain 、 FET amplifier 、 Power-added efficiency 、 Gate driver 、 Linear amplifier
摘要: Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The consists of HEMT, Wilkinson couplers, DC-bias circuit and microstrip line. For each amplifier, we use bipolar DC source. Special RC networks at the input output resistor between source transistor are used for cancellation self-oscillation crosstalk low-frequency amplifier. At same time, branches length 3λ/4 couplers designed elimination two amplifiers. Microstrip stub lines matching matching. Under Vds = 27 V, Vgs –4.0 CW operating conditions 8 GHz, exhibits line gain 5.6 dB added efficiency 23.4%, 41.46 dBm (14 W), compression 3 dB. Between 8.5 variation less than 1.5
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