Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures
作者： Sattam Alotaibi , Nare Gabrielyan , Shashi Paul
DOI: 10.4028/WWW.SCIENTIFIC.NET/AST.95.100
关键词: Nanotechnology 、 Non-volatile memory 、 Materials science 、 Barrier layer 、 Plasma-enhanced chemical vapor deposition 、 Elementary charge 、 Diamond-like carbon 、 Nanostructure 、 Electrical resistivity and conductivity 、 Terminal (electronics)
摘要: This work illustrates a novel device for storing electronic charge and works as non-volatile memory device. It is fabricated using an industrial technique consists of silicon nanostructures diamond like carbon (DLC) element ultra-thin barrier layer respectively. Both the DLC have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. The are sandwiched between two layers. To understand ability to store current-voltage (I-V) current-time (I-t) measurements were carried out. effect noted difference electrical conductivity states (low ‘‘0’’ high ‘‘1’’).
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