Intra- and Interband Free-Carrier Absorption and the Fundamental Absorption Edge in n-Type InP
作者： W. P. Dumke , M. R. Lorenz , G. D. Pettit
关键词: Absorption edge 、 Range (particle radiation) 、 Absorption (logic) 、 Infrared spectroscopy 、 Atomic physics 、 Physics 、 Free carrier absorption 、 Energy (signal processing)
摘要: The infrared absorption in $n$-type InP was studied as a function of free-carrier concentration from 3.5\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to \ensuremath{\sim} ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ the spectral range 10 \ensuremath{\mu} fundamental edge. Burstein shifted edge, normal intraband absorption, and interband were analyzed. edge shifts higher energy with increasing but only by 47% expected shift. separation between central-conduction-band minimum next conduction valleys found be 0.90 \ifmmode\pm\else\textpm\fi{} 0.02 eV.
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