作者: V. V. Privezentsev , V. S. Kulikauskas , A. N. Shemuhin , A. Yu. Trifonov , E. P. Kirilenko
DOI: 10.3103/S1062873815110192
关键词: Zinc 、 X-ray photoelectron spectroscopy 、 Annealing (metallurgy) 、 Ion 、 Analytical chemistry 、 Spectroscopy 、 Polycrystalline silicon 、 Nanoparticle 、 Scanning transmission electron microscopy 、 Materials science
摘要: Nanoparticles are visualized and identified in a near-surface Si layer subjected to the successive implantation of 64Zn+ 16O+ ions. Scanning transmission electron microscopy coupled with energy-dispersive spectroscopy X-ray photoelectron used. An amorphized region 150 nm thick disturbed 50 substrate revealed after implantation. Zinc oxide (ZnO) nanoparticles an average size 8.7 found recrystallized polycrystalline silicon annealing neutral-inert atmosphere at temperature 600–800°C.