II-VI Narrow Bandgap Semiconductors: Optoelectronics
作者： Ian M. Baker
DOI: 10.1007/978-3-319-48933-9_34
关键词: Photodiode 、 Infrared 、 Optoelectronics 、 Semiconductor 、 Infrared detector 、 Band gap 、 Electron avalanche 、 Materials science 、 Operating temperature 、 Detector
摘要: … 34.12 is the simplest device structure currently used. It is consistent with a number of junction-forming processes, e. g., ion implantation, diffusion, and ion milling. …
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sci-hub.st 参考文章(144)
Peter Capper, Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications ,(2012)
Michael A. Kinch, Fundamentals of Infrared Detector Materials ,(2007)
Yann Reibel, Nicolas Péré-Laperne, Laurent Rubaldo, Thibault Augey, Gilbert Decaens, Vincent Badet, Laurent Baud, Julien Roumegoux, Antoine Kessler, Patrick Maillart, Nicolas Ricard, Olivier Pacaud, Gérard Destéfanis, Update on 10μm pixel pitch MCT-based focal plane array with enhanced functionalities Proceedings of SPIE. ,vol. 9451, ,(2015) , 10.1117/12.2178954
R. Kennedy McEwen, David Jeckells, Sudesh Bains, Harald Weller, Developments in reduced pixel geometries with MOVPE grown MCT arrays Proceedings of SPIE. ,vol. 9451, ,(2015) , 10.1117/12.2176546
R.M. Broudy, V.J. Mazurczyk, Chapter 5 (HgCd)Te Photoconductive Detectors Semiconductors and Semimetals. ,vol. 18, pp. 157- 199 ,(1981) , 10.1016/S0080-8784(08)62765-9
N. T. Gordon, I. M. Baker, Assessment of Infrared Materials and Devices Springer, Boston, MA. pp. 23- 42 ,(2001) , 10.1007/978-1-4615-1607-1_2
T.J. Shepherd, D.J. Day, Transport in photo-conductors—II. Sampling from a finite device Solid-state Electronics. ,vol. 25, pp. 713- 718 ,(1982) , 10.1016/0038-1101(82)90199-X
Neil T. Gordon, Chris L. Jones, David J. Lees, Chris D. Maxey, Tim S. Phillips, Les G. Hipwood, Paul C. Haynes, Rose A. Catchpole, High-performance 2D MWIR Hg 1-x Cd x Te array operating at 220K Infrared Technology and Applications XXX. ,vol. 5406, pp. 145- 151 ,(2004) , 10.1117/12.544485
R. Zucca, J. Bajaj, E. R. Blazejewski, Light emission from HgCdTe diodes Journal of Vacuum Science and Technology. ,vol. 6, pp. 2728- 2731 ,(1988) , 10.1116/1.575495
J. P. Hirth, H. Ehrenreich, Charged dislocations and jogs in Hg1−x CdxTe and other II–VI compounds Journal of Vacuum Science and Technology. ,vol. 3, pp. 367- 372 ,(1985) , 10.1116/1.573222