Modified field isolation process with no channel-stop implant encroachment
作者： Hsiao-Chin Tuan , Chih-Yuan Lu
DOI:
关键词: Silicon oxide 、 Materials science 、 Field oxide 、 Semiconductor device 、 Impurity 、 Polycrystalline silicon 、 Optoelectronics 、 Silicon nitride 、 Insulator (electricity) 、 Electronic engineering
摘要: A method for fabricating semiconductor devices having field oxide isolation with channel stop is described which overcomes the encroachment problems of prior art. substrate provided. multilayer oxidation masking structure a silicon layer, polycrystalline layer and nitride formed. The mask patterned by removing portion in areas designated to have grown therein. sidewall insulator formed on exposed sidewalls mask. Impurities are implanted into area form stop. removed. subjecting whereby confined under not encroaching planned device regions.
lens.org 参考文章(7)
Allan T. Mitchell, Howard L. Tigelaar, Bert R. Riemenschneider, Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment ,(1987)
Shih-Wei Sun, Philip J. Tobin, Bich-Yen Nguyen, Michael Woo, Method for locos isolation using a framed oxidation mask and a polysilicon buffer layer ,(1989)
Miyazawa Chikao, MANUFACTURE OF SELECTIVELY OXIDIZED MASK ,(1982)
Hisakazu Iizuka, Norio Endo, Method for fabricating a semiconductor device ,(1981)
Inoue Shunsuke, MANUFACTURE OF SEMICONDUCTOR DEVICE ,(1989)
Sugiura Naoyuki, MANUFACTURE OF SEMICONDUCTOR DEVICE ,(1988)
Tsuji Kenji, MANUFACTURE OF SEMICONDUCTOR DEVICE ,(1986)