Electrical Nanoprobing of Semiconducting Carbon Nanotubes Using an Atomic Force Microscope
作者： Y. Yaish , J.-Y. Park , S. Rosenblatt , V. Sazonova , M. Brink
DOI: 10.1103/PHYSREVLETT.92.046401
关键词: Schottky barrier 、 Nanoprobing 、 Optoelectronics 、 Nanotechnology 、 Conductive atomic force microscopy 、 Carbon nanotube field-effect transistor 、 Current (fluid) 、 Carbon nanotube 、 Electrostatic force microscope 、 Voltage 、 Materials science
摘要: We use an atomic force microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM serves as a voltage or current in three-probe measurement setup. Using movable probe, we investigate scaling device with channel length. study contacts. find that Au makes excellent contact p region, no Schottky barrier. In n large resistances were found which dominate transport properties.
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sci-hub.se 参考文章(28)
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