作者: Junmo Kang , Deep Jariwala , Christopher R. Ryder , Spencer A. Wells , Yongsuk Choi
DOI: 10.1021/ACS.NANOLETT.6B00144
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摘要: … , BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor … tunneling …