Electronic structure of InAs/GaAs self-assembled quantum dots.
作者： M. A. Cusack , P. R. Briddon , M. Jaros
DOI: 10.1103/PHYSREVB.54.R2300
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摘要: The electronic properties of the self-assembled InAs/GaAs quantum dots are investigated theoretically. In our calculation microscopic distribution strain, valence-band mixing, and shape conduction band InAs with strain fully taken into account. New states brought to light their status in framework established approximate models structure is critically examined.
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