Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu2O Films
作者： Kotaro Mizuno , Masanobu Izaki , Kuniaki Murase , Tsutomu Shinagawa , Masaya Chigane
DOI: 10.1149/1.1862478
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摘要: The p-type semiconductor cuprous oxide (Cu 2 O) film has been of considerable interest as a component solar cells and photodiodes due to its bandgap energy 2.1 eV high optical absorption coefficient. We prepared Cu O films on conductive substrate by electrodeposition at 318 K from an aqueous solution containing copper sulfate lactic acid. structural electrical characterizations the resulting were examined X-ray diffraction, photoelectron spectroscopy, measurements, Hall effect measurement, respectively. resistivity varied 2.7 × 10 4 3.3 X 6 Ω cm, while carrier density was 1 cm - 3 mobility 0.4 1.8 V s , depending preparation conditions, i.e., pH deposition potential. sensitive atomic ratio in grain size.
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