作者: Sungmu Kang , Greg A. Brewer , Battogtokh Jugdersuren , Robert DiPietro , Don Heiman
DOI: 10.1063/1.3425780
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摘要: Boron-incorporated Mn5SiC nanowires were grown using chemical vapor deposition method. The nanowire cluster exhibits magnetic hysteresis loops at room temperature and the strength of behavior depends on concentration boron incorporation. nanowire-based devices exhibit spin dependent transport properties which shows significant changes with content. Large magnetoresistance is observed in lightly boron-incorporated it decreases increase