Graphene bridge rectifier based on self-switching diode arrays.

作者: Jiawei Zhang , Joseph Brownless , Aimin Song

DOI: 10.1088/1361-6528/AB25FD

关键词:

摘要: Here, we present theory and measurements for a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs). Despite graphene's lack bandgap high carrier concentration causing reduced rectification ratio, the extremely mobility will allow GSSDs to work at frequencies well into THz region. Compared with single SSD array, structure allows full-wave an AC signal. Here derive equation voltage output GSSDs, which predicts quadratic relationship between input current. This is confirmed using DC measurements. The fabricated found have room temperature intrinsic responsivity [Formula: see text] low frequency noise equivalent power text].

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