High speed magneto-resistive random access memory

摘要: A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic films surrounding magento-resistive film which may be or not. One outer has higher coercive force than the other and therefore remains magnetized in one sense while switched by switching magnetic field. The magneto-resistive sensitive to amplitude resultant field between constructed resistivity, material capable sensing currents. This permits voltages faster operations. Alternate embodiments with perpendicular anisotropy, in-plane anisotropy are shown, including an embodiment uses permeability guides direct closing flux path through material. High density, speed, radiation hard, matrices these elements.