Improved phase-change characteristics of Si doped GeSbTe thin films used for phase change memory
作者： Liang Tong , Ling Xu , Yifan Jiang , Fei Yang , Lei Geng
DOI: 10.1016/J.JNONCRYSOL.2011.11.022
关键词:
摘要: Abstract The phase-change characteristics of silicon doped Ge 2 Sb Te 5 (Si-GST) film were investigated and compared with pure (GST) film. results in situ temperature dependence the sheet resistance demonstrate that crystalline resistivity GST increased by doping, but phase transition T c was almost unchanged. minimum on/off ratio for Si-doped is around 240, which high enough to be used device application. Both prototype memory devices can perform SET RESET cycles. threshold voltage V th while current decreased doping. Applying Kissinger method activation energy crystallization (300 nm) determined 2.30 ± 0.05 eV.
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I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements Journal of Applied Physics. ,vol. 87, pp. 4130- 4134 ,(2000) , 10.1063/1.373041
S. Privitera, E. Rimini, R. Zonca, Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements Applied Physics Letters. ,vol. 85, pp. 3044- 3046 ,(2004) , 10.1063/1.1805200
Noboru Yamada, Eiji Ohno, Nobuo Akahira, Ken'ichi Nishiuchi, Ken'ichi Nagata, Masatoshi Takao, High Speed Overwritable Phase Change Optical Disk Material Japanese Journal of Applied Physics. ,vol. 26, pp. 61- 66 ,(1987) , 10.7567/JJAPS.26S4.61
Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Yan Cheng, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng, Bomy Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state Applied Physics Letters. ,vol. 99, pp. 032105- ,(2011) , 10.1063/1.3614553
Feng Rao, Zhitang Song, Liangcai Wu, Min Zhong, Songlin Feng, Bomy Chen, Phase change memory cell with an upper amorphous nitride silicon germanium heating layer Applied Physics Letters. ,vol. 91, pp. 073505- ,(2007) , 10.1063/1.2771053
Baowei Qiao, Jie Feng, Yunfeng Lai, Yun Ling, Yinyin Lin, Ting’ao Tang, Bingchu Cai, Bomy Chen, Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory Applied Surface Science. ,vol. 252, pp. 8404- 8409 ,(2006) , 10.1016/J.APSUSC.2005.11.047
Yuichiro Yamada, Tatsuya Tsuge, Norio Yamamoto, Masao Yamawaki, Hiroshi Orihara, Yoshihiro Ishibashi, Simulations of Switching Behavior in a Ferroelectric Liquid Crystal Japanese Journal of Applied Physics. ,vol. 26, pp. 1811- 1815 ,(1987) , 10.1143/JJAP.26.1811
J. Feng, Y. Zhang, B.W. Qiao, Y.F. Lai, Y.Y. Lin, B.C. Cai, T.A. Tang, B. Chen, Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory Applied Physics A. ,vol. 87, pp. 57- 62 ,(2007) , 10.1007/S00339-006-3851-2
Martijn H. R. Lankhorst, Bas W. S. M. M. Ketelaars, R. A. M. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Materials. ,vol. 4, pp. 347- 352 ,(2005) , 10.1038/NMAT1350
Matthias Wuttig, Phase-change materials: towards a universal memory? Nature Materials. ,vol. 4, pp. 265- 266 ,(2005) , 10.1038/NMAT1359