Ion implantation in semiconductors

摘要: Ion implantation is being applied extensively to silicon device technology. Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells 2) distribution microwave bipolar structures. Another feature that has not been exploited combine the advantages of high resolution capabilities electric beam pattern delineation with low lateral spread inherent process. This talk reviews some general characteristics implanted layers terms depth distribution, radiation damage electron activity. Implantation processes reasonably well understood. There remain areas which require further clarification. For compound semiconductors, particularly GaAs, techniques offer attractive possibilities fabrication frequency devices. In these materials, substrate temperature during dielectric coating required prevent dissociation thermal anneal play major roles.