作者: G K Mussabek , D Yermukhamed , K K Dikhanbayev , A Schleusener , S Mathur
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摘要: The crystalline germanium nanostructures were obtained on a silicon surface by the chemical vapor deposition technique using (IV) iso-propoxide ([Ge(OiPr)4]) metalorganic precursor as source. As was observed, one-dimensional (1D) form without metal catalyst, meaning that formation of 1D is based not vapor–liquid–solid (VLS) growth mechanism, but self-organization processes which take place surfaces during CVD process pyrolysis. Our observation suggests non-catalytic nanocolumns strongly dependent temperature. phase composition and morphology have been investigated x-ray diffraction (XRD) photoelectron spectroscopy (XPS), high resolution scanning electron microscopy (HRSEM), respectively. results provide new way to grow contamination mechanism known cause, allowing for application such materials in micro- optoelectronics.